US Patent Issued to SAMSUNG ELECTRONICS on March 3 for "Decoupling capacitor structure and semiconductor device including the same" (South Korean Inventor)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,617, issued on March 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Decoupling capacitor structure and semiconductor device including the same" was invented by Jongmin Lee (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A decoupling capacitor structure includes an insulating division pattern, conductive pads, lower electrode sets, a support structure, a dielectric layer, and an upper electrode structure. The conductive pads are at opposite sides of the insulating division pattern. The lower electrode sets are spaced apart from each other in a horizontal direction on each conductive pad. The support...