US Patent Issued to SAMSUNG ELECTRONICS on March 24 for "Semiconductor memory device and method for fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,187, issued on March 24, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor memory device and method for fabricating the same" was invented by Hye Ran Lee (Hwaseong-si, South Korea), Kyung Soo Kim (Hwaseong-si, South Korea), Kyoung Cho Na (Hwaseong-si, South Korea) and Se Ryeun Yang (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a substrate including cell and peripheral regions, a cell gate electrode disposed at the cell region, a bit line structure disposed at the cell region and including a cell conductive line and a cell line capping film disposed ...