ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,251, issued on March 24, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor memory device" was invented by Hyuncheol Kim (Seoul, South Korea), Yongseok Kim (Suwon-si, South Korea), Dongsoo Woo (Seoul, South Korea), Kyunghwan Lee (Seoul, South Korea) and Minjun Lee (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device may include a substrate, first and second impurity regions on the substrate, first and second gate insulating layers sequentially stacked on the substrate and extended in a direction between the first and second impurity regions, and a gate electrode on the se...