ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,199, issued on March 24, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Non-volatile memory device and electronic system including the same" was invented by Dae-Hun Choi (Hwaseong-si, South Korea), Jae Chul Lee (Hwaseong-si, South Korea), Byung-Sun Park (Suwon-si, South Korea) and Seung Jae Sim (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory device includes a substrate having a cell array region and an extension region. A mold structure includes a plurality of gate electrodes and a plurality of mold insulating layers alternately stacked on the substrate such that the mold struct...