US Patent Issued to SAMSUNG ELECTRONICS on March 24 for "Method of fabricating semiconductor memory device including capping layer" (South Korean Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,185, issued on March 24, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Method of fabricating semiconductor memory device including capping layer" was invented by Hyeon-Woo Jang (Hwaseong-si, South Korea), Dong-Wan Kim (Hwaseong-si, South Korea), Keonhee Park (Suwon-si, South Korea), Dong-Sik Park (Suwon-si, South Korea), Joonsuk Park (Suwon-si, South Korea) and Jihoon Chang (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are semiconductor memory devices and their fabrication methods. The method comprises providing a substrate including a cell array region and a boundary region, forming a dev...