US Patent Issued to SAMSUNG ELECTRONICS on March 24 for "Method of fabricating semiconductor device including organic and silicon oxide layers" (South Korean Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,478, issued on March 24, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Method of fabricating semiconductor device including organic and silicon oxide layers" was invented by Eun Hyea Ko (Suwon-si, South Korea), Hoon Han (Suwon-si, South Korea), Byung Keun Hwang (Suwon-si, South Korea), Young Hun Sung (Suwon-si, South Korea) and Youn Joung Cho (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a semiconductor device includes forming a first layer which has a first surface, does not contain an acid, and contains a metal material. The method includes forming, on the first layer, a ...