US Patent Issued to SAMSUNG ELECTRONICS on March 24 for "Memory device including read offset compensator and offset reference resistance compensation method thereof" (South Korean Inventor)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,586,641, issued on March 24, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Memory device including read offset compensator and offset reference resistance compensation method thereof" was invented by Gyuseong Kang (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell array including memory cells, a row decoder, a column decoder, a sense amplifier that reads data stored in a memory cell by detecting a difference between a source line voltage and a reference voltage during a read operation, and a control logic including a read offset compensator that receives output data from...