US Patent Issued to SAMSUNG ELECTRONICS on March 24 for "Electrode structure including nano dot pattern and semiconductor device and electronic system including the same" (South Korean Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,196, issued on March 24, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Electrode structure including nano dot pattern and semiconductor device and electronic system including the same" was invented by Keun Lee (Seongnam-si, South Korea), Kihyun Yoon (Suwon-si, South Korea), Jeonggil Lee (Hwaseong-si, South Korea) and Hauk Han (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electrode structure includes a conductive electrode, the conductive electrode including a first surface, an insulating layer on the conductive electrode, the insulating layer being in contact with the first surface of the condu...