ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,218, issued on March 24, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Chalcogenide material, switching device including the chalcogenide material, and memory device including the switching device" was invented by Hajun Sung (Suwon-si, South Korea), Youngjae Kang (Suwon-si, South Korea), Bonwon Koo (Suwon-si, South Korea), Yongyoung Park (Suwon-si, South Korea), Dongho Ahn (Suwon-si, South Korea), Kiyeon Yang (Suwon-si, South Korea), Wooyoung Yang (Suwon-si, South Korea), Changseung Lee (Suwon-si, South Korea) and Minwoo Choi (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A chalcogenide material ac...