US Patent Issued to SAMSUNG ELECTRONICS on March 17 for "Tellurium oxide, and thin film transistor comprising same as channel layer" (South Korean Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,709, issued on March 17, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Tellurium oxide, and thin film transistor comprising same as channel layer" was invented by Jae Kyeong Jeong (Seoul, South Korea) and Tai Kyu Kim (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Tellurium oxide and a thin film transistor comprising the same as a channel layer are provided. The tellurium oxide is a metal oxide including tellurium, wherein a portion of the tellurium is in a Te0 state having a zero oxidation number, and another portion of the tellurium is in a Te4+ state having a tetravalent oxidation number."

The pate...