ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,645, issued on March 17, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Semiconductor memory devices" was invented by So Hyeon Bae (Suwon-si, South Korea), Won Chul Lee (Suwon-si, South Korea) and Byeong Jun Bae (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device may include a substrate including a cell region and a peripheral region defined around the cell region, and a gate structure which may include sequentially stacked first, second, and third conductive layers including different materials, the first conductive layer including polysilicon. A capping layer may be on the th...