US Patent Issued to SAMSUNG ELECTRONICS on March 17 for "Semiconductor device including fin field effect transistor and planar fin field effect transistor" (South Korean Inventor)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,729, issued on March 17, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including fin field effect transistor and planar fin field effect transistor" was invented by Sungwoon Hwang (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, at least one finFET on a first area of the substrate, the at least one finFET including a first gate structure and first source/drain regions on opposite sides of the first gate structure, and a planar FET on a second area of the substrate, the planar FET including a second gate structure and second source/drai...