ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,642, issued on March 17, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device" was invented by Jungmin Park (Suwon-si, South Korea), Hanjin Lim (Suwon-si, South Korea) and Hyungsuk Jung (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a cell capacitor disposed on a substrate and that and includes a first electrode, a dielectric layer structure, and a second electrode. The dielectric layer structure includes a first dielectric layer disposed on the first electrode and that includes a ferroelectric material, a second dielectric layer disposed on the first diel...