ALEXANDRIA, Va., March 17 -- United States Patent no. 12,580,022, issued on March 17, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Block selection circuit controlling series-connected pass transistors using shared switch circuit and flash memory including the same" was invented by Tae-Hong Kwon (Suwon-si, South Korea), Gyosoo Choo (Suwon-si, South Korea) and Cheon An Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A block selection circuit of a flash memory, includes: a first pass transistor connected to an address decoder; a second pass transistor connected in series with the first pass transistor; a first driver circuit configured to control a gate voltag...