US Patent Issued to SAMSUNG ELECTRONICS on March 17 for "Block selection circuit controlling series connected pass transistors and flash memory including the same" (South Korean Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,580,021, issued on March 17, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Block selection circuit controlling series connected pass transistors and flash memory including the same" was invented by Tae-Hong Kwon (Suwon-si, South Korea), Gyosoo Choo (Suwon-si, South Korea), Myung Uk Park (Suwon-si, South Korea) and Donggeun Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A flash memory includes a memory block connected to word lines, an address decoder that selects one or more of the word lines, a first pass transistor connected to the address decoder, a second pass transistor connected in series with t...