ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,280, issued on June 30, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Vertical type non-volatile memory devices and methods of fabricating the same" was invented by Ahreum Lee (Suwon-si, South Korea), Woosung Yang (Suwon-si, South Korea), Jimo Gu (Suwon-si, South Korea), Jaeho Kim (Suwon-si, South Korea) and Sukkang Sung (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to some embodiments of inventive concepts, vertical nonvolatile memory devices and related methods may reduce chip size. The nonvolatile memory device may include a substrate that includes a cell array area and an extension area....