US Patent Issued to SAMSUNG ELECTRONICS on June 30 for "MOSFET semiconductor device and method of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,317, issued on June 30, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"MOSFET semiconductor device and method of manufacturing the same" was invented by Doohyun Lee (Suwon-si, South Korea), Heonjong Shin (Suwon-si, South Korea), Seon-Bae Kim (Suwon-si, South Korea) and Jaeran Jang (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, the semiconductor device includes a substrate comprising a cell region, a dummy region spaced apart from the cell region in a first direction, and a border region between the cell region and the dummy region, an active pattern on the cell region, a device isol...