ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,528, issued on June 30, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Method of fabricating semiconductor device" was invented by Yongchul Jeong (Suwon-si, South Korea), Sangjin Kim (Suwon-si, South Korea), Yigwon Kim (Seongnam-si, South Korea), Kyeongbeom Park (Suwon-si, South Korea), Suhyun Bark (Seongnam-si, South Korea), Sangshin Jang (Seoul, South Korea), Jinhee Jang (Seoul, South Korea), Cheolin Jang (Seoul, South Korea) and Tae Min Choi (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a semiconductor device is disclosed. The method may include forming an etch-target laye...