ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,521, issued on June 30, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Method of fabricating a semiconductor device based on a measured misalignment value" was invented by Keunnam Kim (Suwon-si, South Korea), Kiseok Lee (Suwon-si, South Korea) and Byeongjoo Ku (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a semiconductor fabrication method comprising forming a first conductive structure and a second conductive structure, measuring a misalignment value between the first conductive structure and the second conductive structure, based on the measured misalignment value selecting a reticle fro...