US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Semiconductor memory device having epitaxial layer on the active layer" (South Korean Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,600, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor memory device having epitaxial layer on the active layer" was invented by Beomseo Kim (Suwon-si, South Korea) and Jamin Koo (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an active pattern protruding from an upper surface of a substrate in a vertical direction substantially perpendicular to the upper surface of the substrate, an isolation pattern covering a sidewall of the active pattern, an epitaxial layer on the active pattern and including single crystalline silicon doped with impuriti...