ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,593, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor memory device and method of fabricating the same" was invented by Kiseok Lee (Hwaseong-si, South Korea), Keunnam Kim (Yongin-si, South Korea), Yongseok Kim (Suwon-si, South Korea), Hui-Jung Kim (Seongnam-si, South Korea), Min Hee Cho (Suwon-si, South Korea) and Yoosang Hwang (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device including a stack structure including layer groups that are vertically stacked on a substrate and including a word line, a channel layer, and a data storage element that i...