US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Semiconductor devices with power gating" (South Korean Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,597, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor devices with power gating" was invented by Yoo Seok Son (Suwon-si, South Korea), Se Hun Kim (Suwon-si, South Korea), Yun Ju Kwon (Suwon-si, South Korea), Won Soo Kim (Suwon-si, South Korea), Sae Na Yuk (Suwon-si, South Korea) and Youn-Sik Choi (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a retention circuit configured to retain a data value during a power gating operation, a non-retention circuit configured not to retain a data value during the power gating operation, a clock management...