US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Semiconductor device including isolation pattern formed based on insulating layer and method for manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,694, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including isolation pattern formed based on insulating layer and method for manufacturing the same" was invented by Heesub Kim (Suwon-si, South Korea), Gunho Jo (Suwon-si, South Korea), Bomi Kim (Suwon-si, South Korea) and Eunho Cho (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device includes: forming a semiconductor structure and a dummy structure on a substrate; forming a first insulating layer between the semiconductor structure and the dummy structure; forming a fi...