US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Semiconductor device including gate structure and multiple integrated separation structures" (South Korean Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,649, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including gate structure and multiple integrated separation structures" was invented by Jeewoong Kim (Suwon-si, South Korea), Jisu Kang (Suwon-si, South Korea) and Hojun Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes active regions, including a first active region and a second active region, extending in a first horizontal direction, an isolation region defining the active regions, a gate structure disposed on the isolation region and extending in a second horizontal direction ...