ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,691, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Semiconductor device including an internal spacer" was invented by Chang Woo Noh (Hwaseong-si, South Korea), Myung Gil Kang (Suwon-si, South Korea), Tae Young Kim (Hwaseong-si, South Korea), Geum Jong Bae (Suwon-si, South Korea) and Keun Hwi Cho (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, first to sixth nanowires extending in a first direction and spaced apart from each other, first to third gate electrodes extending in a second direction and respectively on first to third regions of th...