US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Semiconductor device having gate insulating layer in trench and on upper surface of substrate, channel layer on gate insulating layer, and spaced-apart source and drain electrodes on channel layer" (South Korean Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,661, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Semiconductor device having gate insulating layer in trench and on upper surface of substrate, channel layer on gate insulating layer, and spaced-apart source and drain electrodes on channel layer" was invented by Junyoung Kwon (Suwon-si, South Korea), Minsu Seol (Suwon-si, South Korea), Keunwook Shin (Suwon-si, South Korea) and Minseok Yoo (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate including a gate electrode therein, a trench penetrating the gate electrode and arranged in the substr...