ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,604, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Semiconductor device and manufacturing method thereof" was invented by Jongmin Kim (Suwon-si, South Korea), Ho-Ju Song (Suwon-si, South Korea) and Myeong-Dong Lee (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes forming a buffer layer on a substrate including active regions and word lines, sequentially stacking a first conductive layer and a first insulating layer, forming bit line structure main parts such that each bit line main part is in contact with one or more of the activ...