ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,033, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Page buffer circuit and memory device including a page buffer circuit" was invented by Minjie Choi (Suwon-si, South Korea), Chaehoon Kim (Suwon-si, South Korea), Hyunkook Park (Suwon-si, South Korea) and Jisang Lee (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell array, a plurality of page buffer units connected to the memory cell array and connected in common to a combined sensing node, and a plurality of cache latches respectively corresponding to the plurality of page buffer units, the pluralit...