US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Non-volatile memory device and system including the same" (South Korean Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,622, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Non-volatile memory device and system including the same" was invented by Min Jun Lee (Suwon-si, South Korea), Jong Ho Woo (Suwon-si, South Korea) and Yong Seok Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory device includes a substrate; an insulating layer on the substrate; a bit line isolation layer on the insulating layer; a common source line conductive layer on the bit line isolation layer; a ferroelectric memory cell on the bit line isolation layer; a bit line connected to a top of the ferroelectric mem...