ALEXANDRIA, Va., July 15 -- United States Patent no. 12,664,061, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Memory device and operating method thereof" was invented by Wonyoung Jang (Suwon-si, South Korea) and Taewon Kim (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a row decoder including a plurality of row decoder blocks arranged in series, wherein the plurality of row decoder blocks are distinguished based on row addresses which the plurality of row decoder blocks take charge of; a repair address storage circuit including a fuse array in which a first plurality of faulty row addresses are stored; a repair contr...