US Patent Issued to SAMSUNG ELECTRONICS on June 16 for "Processing-in-memory (PIM) high bandwidth memory (HBM) devices including PIM dynamic random access memory (DRAM) dies" (South Korean Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,656,968, issued on June 16, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Processing-in-memory (PIM) high bandwidth memory (HBM) devices including PIM dynamic random access memory (DRAM) dies" was invented by Jeonil Lee (Suwon-si, South Korea), Jinwoo Han (Suwon-si, South Korea) and Seryeun Yang (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a memory device including a processing-in-memory (PIM) dynamic random access memory (DRAM) die(s) and PIM-high bandwidth memory (HBM) devices. The memory device includes a core peripheral circuit structure including a bank core circuit including a row...