ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,297, issued on June 16, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Method for fabricating a semiconductor device" was invented by Ju Youn Kim (Suwon-si, South Korea), Myung Soo Seo (Suwon-si, South Korea), Joong Gun Oh (Suwon-si, South Korea), Seul Gi Yun (Suwon-si, South Korea) and Jin Woo Kim (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device includes providing a substrate having first to fourth regions defined thereon. First to fourth active patterns are formed in the first to fourth regions, respectively. Each of the first to fourth active patterns ext...