US Patent Issued to SAMSUNG ELECTRONICS on July 7 for "Three-dimensional ferroelectric memory devices" (South Korean Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,422, issued on July 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Three-dimensional ferroelectric memory devices" was invented by Kyunghwan Lee (Suwon-si, South Korea), Yongseok Kim (Suwon-si, South Korea) and Daewon Ha (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional ferroelectric memory device includes a channel on a substrate and extending in a vertical direction substantially perpendicular to an upper surface of the substrate, a gate insulation pattern and a conductive pattern stacked on and surrounding a sidewall of the channel in a horizontal direction substantially parallel t...