US Patent Issued to SAMSUNG ELECTRONICS on July 7 for "Three-dimensional ferroelectric memory device" (South Korean Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,424, issued on July 7, was assigned to SAMSUNG ELECTRONICS Co. Ltd..

"Three-dimensional ferroelectric memory device" was invented by Jinseong Heo (Suwon-si, South Korea), Taehwan Moon (Suwon-si, South Korea), Seunggeol Nam (Suwon-si, South Korea) and Hyunjae Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional (3D) ferroelectric memory device may include a plurality of gate electrodes stacked on a substrate, a plurality of ferroelectric layers in contact with the plurality of gate electrodes, a plurality of intermediate electrodes in contact with the plurality of ferroelectric layers, a gate insulating layer i...