ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,411, issued on July 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor memory device" was invented by Jongmin Kim (Suwon-si, South Korea) and Chansic Yoon (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device is provided. The semiconductor memory device includes: a substrate including a plurality of active regions in a memory cell region and at least one logic active region in a peripheral circuit region; a word line extending in a first horizontal direction on the plurality of active regions; a bit line structure extending in a second horizontal direction orthogonal t...