US Patent Issued to SAMSUNG ELECTRONICS on July 7 for "Semiconductor device including amorphous oxide semiconductor channel layer" (South Korean Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,444, issued on July 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including amorphous oxide semiconductor channel layer" was invented by Kiseok Lee (Hwaseong-si, South Korea), Keunnam Kim (Yongin-si, South Korea), Hui-Jung Kim (Seongnam-si, South Korea) and Min Hee Cho (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a gate electrode on the substrate, a channel layer between the substrate and the gate electrode, the channel layer including an amorphous oxide semiconductor, and a width of the gate electrode being greater than a width of t...