ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,614, issued on July 7, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Plasma edge ring, plasma etching apparatus including the same, and plasma etching method using the same" was invented by Hyunjoo Lee (Suwon-si, South Korea), Sang Ki Nam (Seongnam-si, South Korea) and Young Hyun Jo (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are plasma edge rings, plasma etching apparatuses, and plasma etching methods. The plasma etching apparatus comprises a plasma electrode, a plasma edge ring on the plasma electrode, and a guide electrode outside an etching target on the plasma electrode. The plasma ...