US Patent Issued to SAMSUNG ELECTRONICS on July 7 for "Nonvolatile memory" (South Korean Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,675,223, issued on July 7, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Nonvolatile memory" was invented by Sangsoo Park (Suwon-si, South Korea), Jinyoung Kim (Suwon-si, South Korea), Sehwan Park (Suwon-si, South Korea) and Jisang Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nonvolatile memory device includes a memory block, a page buffer circuit and a control circuit. The page buffer circuit is connected to the cell strings through bit-lines. The control circuit controls a read operation by: latching a first sensing data and a second sensing data in the page buffer circuit by performing a first re...