US Patent Issued to SAMSUNG ELECTRONICS on July 7 for "Memory device including clock signal correction circuit, memory system, and operating method of memory device" (South Korean Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,675,227, issued on July 7, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Memory device including clock signal correction circuit, memory system, and operating method of memory device" was invented by Wonmuk Lim (Suwon-si, South Korea) and Seunghwan Hong (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a clock signal correction circuit, a memory system, and an operating method of the memory device. The memory device may include a first correction circuit configured to adjust phases of first to fourth clock signals and output first to fourth corrected clock signals, a second correction ...