ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,452, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Vertical memory device and method of manufacturing the same" was invented by Sungbok Lee (Suwon-si, South Korea) and Junhee Lim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical memory device includes a memory channel structure disposed on a substrate, a plurality of division layers disposed on the substrate and a gate electrode structure. The memory channel structure extends in a vertical direction substantially perpendicular to an upper surface of the substrate. The division layers contact the memory channel structure, resp...