ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,457, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Three-dimensional semiconductor memory device and method of fabricating the same" was invented by Jeon Il Lee (Suwon-si, South Korea) and Kyunghwan Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a cell string and a first conductive pillar and a second conductive pillar connected to the cell string. The cell string includes plural memory cells, which are stacked on a substrate to be spaced apart from each other. The first conductive pillar is spaced apart from the second conductive pillar in ...