ALEXANDRIA, Va., July 28 -- United States Patent no. 12,694,940, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Nonvolatile memory device, storage device having the same, and testing method thereof" was invented by Yongha Park (Suwon-si, South Korea), Seaeun Park (Suwon-si, South Korea) and Saeeun Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nonvolatile memory device includes at least one first universal interface bus (UIB) circuit coupled to a plurality of input/output (I/O) pads, at least one second UIB circuit coupled to the plurality of I/O pads, a core block including a first input terminal coupled to another block, and a pluralit...