US Patent Issued to SAMSUNG ELECTRONICS on July 28 for "Nanosheet semiconductor device having a through via extending through a source/drain region between two active region separation cuts" (South Korean Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,750, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Nanosheet semiconductor device having a through via extending through a source/drain region between two active region separation cuts" was invented by Kern Rim (Suwon-si, South Korea), Doo Hyun Lee (Suwon-si, South Korea), Heon Jong Shin (Suwon-si, South Korea) and Jin Young Park (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes first through third active patterns extending in and spaced apart from each other along a first direction on a first surface of a substrate; ...