ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,749, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Integrated circuit semiconductor device" was invented by Seungha Oh (Suwon-si, South Korea), Jaewon Hwang (Suwon-si, South Korea), Kwangjin Moon (Suwon-si, South Korea), Hojin Lee (Suwon-si, South Korea) and Hyungjun Jeon (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit semiconductor device includes a substrate having a first surface and a second surface opposite to the first surface; a power via penetrating between the first surface and the second surface of the substrate; a cell part including a plurality of ind...