US Patent Issued to SAMSUNG ELECTRONICS on July 14 for "Reversed high aspect ratio contact (HARC) structure and process" (New York Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,119, issued on July 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Reversed high aspect ratio contact (HARC) structure and process" was invented by Buhyun Ham (Mechanicville, N.Y.), Byounghak Hong (Albany, N.Y.), Myunghoon Jung (Clifton Park, N.Y.), Wonhyuk Hong (Clifton Park, N.Y.), Seungyoung Lee (Clifton Park, N.Y.) and Kang-ill Seo (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor chip architecture including a wafer, a front-end-of-line (FEOL) layer on a first side of the wafer, the FEOL layer including a semiconductor device and an interlayer dielectric (ILD) structure on the se...