US Patent Issued to SAMSUNG ELECTRONICS on July 14 for "Flash memory reducing program rising time and program method thereof" (South Korean Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,682,965, issued on July 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Flash memory reducing program rising time and program method thereof" was invented by Byungsoo Kim (Suwon-si, South Korea), Minseo Cha (Suwon-si, South Korea) and Jin-Young Chun (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides methods and apparatuses for reducing a program voltage rising time. In some embodiments, a flash memory includes a memory cell array including a plurality of memory cells, a target voltage generator configured to adjust a target voltage level of a word line recovery voltage provide...