ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,537,063, issued on Jan. 27, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-Do, South Korea).
"Memory device" was invented by Eunhyang Park (Suwon-si, South Korea), Jinyoung Kim (Suwon-si, South Korea) and Sehwan Park (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a cell region in which a plurality of memory cells are arranged and a peripheral circuit region in which a row decoder is connected to the plurality of memory cells through a plurality of wordlines, a plurality of page buffers connected to the plurality of memory cells through a plurality of bitlines, and a control logic controlling the ro...