US Patent Issued to SAMSUNG ELECTRONICS on Jan. 20 for "Nonvolatile memory with vertical contact through memory stack" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,467, issued on Jan. 20, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Nonvolatile memory with vertical contact through memory stack" was invented by Yoo-Cheol Shin (Suwon-si, South Korea), Young-Woo Park (Suwon-si, South Korea) and Jae-Duk Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a peripheral circuit region on a substrate, a polysilicon layer on the peripheral circuit region, a memory cell array region on the polysilicon layer and overlapping the peripheral circuit region, the peripheral circuit region being under the memory cell array region, an upper intercon...