US Patent Issued to SAMSUNG ELECTRONICS on Jan. 20 for "Methods of fabricating a capacitor and semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,447, issued on Jan. 20, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Methods of fabricating a capacitor and semiconductor device" was invented by Cheoljin Cho (Hwaseong-si, South Korea), Hyunjun Kim (Gwacheon-si, South Korea), Yukyung Shin (Suwon-si, South Korea), Jongbeom Seo (Seoul, South Korea) and Changhwa Jung (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a capacitor includes forming a lower electrode on a semiconductor substrate in a reaction space. A homogeneous oxide layer is formed on the lower electrode. A dielectric layer is formed on the homogeneous oxide layer. An up...