ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,713, issued on Jan. 20, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Method for manufacturing semiconductor device" was invented by Sanggyo Chung (Suwon-si, South Korea), Chanmi Lee (Suwon-si, South Korea), Seunghee Han (Suwon-si, South Korea) and Jungpyo Hong (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method for manufacturing a semiconductor device, in which a mask layer, a buffer layer, and a first mandrel layer are sequentially stacked on a substrate including a first region and a second region. First mandrel patterns are formed on the buffer layer in the first region, and a secon...